Method of making junction isolated bipolar device in unisolated IGFET IC

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  机译： 扩散制造结隔离IGFET和双极晶体管集成电路的工艺

• 4. ACTIVE AREA JUNCTION ISOLATION STRUCTURE AND JUNCTION ISOLATED TRANSISTORS INCLUDING IGFET, JFET AND MOS TRANSISTORS AND METHOD FOR MAKING [P] . 世界知识产权组织专利： WO2008137480A3 . 2009-10-15

  机译： 包括IGFET，JFET和MOS晶体管的有源区结隔离结构和结隔离晶体管及其制造方法

• 5. ACTIVE AREA JUNCTION ISOLATION STRUCTURE AND JUNCTION ISOLATED TRANSISTORS INCLUDING IGFET, JFET AND MOS TRANSISTORS AND METHOD FOR MAKING [P] . 美国专利： US2008272408A1 . 2008-11-06

  机译： 包括IGFET，JFET和MOS晶体管的有源区结隔离结构和结隔离晶体管及其制造方法

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