ALUMINUM-SILICON SCHOTTKY TYPE DIODE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE COMPRISING SUCH A DIODE

• 1. 包括具有重叠掺杂区的肖特基二极管的半导体器件及其制造方法 [P] . 中国专利： CN103443907B . 2017.06.09
• 2. 包括具有重叠掺杂区的肖特基二极管的半导体器件及其制造方法 [P] . 中国专利： CN103443907A . 2013-12-11
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  机译： 包括肖特基二极管和具有高掺杂区的二极管的半导体器件及其相应的制造方法

• 4. MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE COMPRISING A SCHOTTKY DIODE AND A HIGH ELECTRON MOBILITY TRANSISTOR [P] . 欧洲知识产权局专利： EP2793255B8 . 2018-01-17

  机译： 包含肖特基二极管和高电子迁移率晶体管的半导体装置的制造方法

• 5. MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE COMPRISING A SCHOTTKY DIODE AND A HIGH ELECTRON MOBILITY TRANSISTOR [P] . 欧洲知识产权局专利： EP2793255B1 . 2017-12-06

  机译： 包含肖特基二极管和高电子迁移率晶体管的半导体装置的制造方法

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• 5. An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application [O] . HuiWen Xue, QiMing He, GuangZhong Jian, 2018
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• 1. PEROVSKITE SEMICONDUCTOR OPTOELECTRONIC DEVICES Rational molecular passivation for high-performance perovskite light-emitting diodes [J] . Jingbi You . 半导体学报：英文版 . 2019,第4期
• 2. Comparative study of various methods for extraction of multi-quantum wells Schottky diode parameters [J] . Elyes Garoudja ,Walid Filali ,Slimane Oussalah . 半导体学报：英文版 . 2020,第10期
• 3. A Fast-Speed Pulse Detector Based on N-Type Si-Schottky Diode via Tuning Circuit [J] . Ling Wang ,Xiao-Hong Tang ,Fei Xiao . 电子科技学刊 . 2010,第003期
• 4. UHV/CVD生长亚微米薄硅外延层制备高频肖特基势垒二极管 [C] . 吴贵斌 ,叶志镇 ,黄靖云 . 第十三届全国半导体集成电路、硅材料学术会 . 2003
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