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SI3N4 FORMED BY NITRIDATION OF SINTERED SILICON COMPACT

机译:氮化硅烧结氮化制得的SI3N4

摘要

A polycrystalline silicon nitride body is produced by shaping silicon powder into a green body, sintering the body to produce a sintered body with a density ranging from 60% to 75% of the theoretical density of silicon, said sintered body having a microstructure with an average grain size as well as an average poresize ranging from about 0.1 micron to 6 microns and wherein the pores are interconnecting and open to the surface of the body, and reacting said sintered body with gaseous nitrogen to convert it to silicon nitride.
机译:通过将硅粉成形为生坯,烧结该坯体以产生密度为硅理论密度的60%至75%的烧结体,来生产多晶硅氮化物体,所述烧结体具有平均的微观结构。晶粒尺寸以及约0.1微米至6微米的平均孔径,其中这些孔相互连接并通向主体表面,并使所述烧结的主体与气态氮反应以将其转化为氮化硅。

著录项

  • 公开/公告号NO145432C

    专利类型

  • 公开/公告日1982-03-24

    原文格式PDF

  • 申请/专利权人 GENERAL ELECTRIC CO;

    申请/专利号NO19770000025

  • 发明设计人 GRESKOVICH CHARLES DAVID;PROCHAZKA SVANTE;

    申请日1977-01-05

  • 分类号C04B35/58;

  • 国家 NO

  • 入库时间 2022-08-22 13:41:51

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