Semiconducting highly antimony doped silicon prodn. - by doping melt with antimony alloy to reduce antimony vapour pressure and drawing

• 1. 一种直接制取锡锑掺杂氧化物用高纯锡、锑化合物的方法 [P] . 中国专利： CN100398450C . 2008.07.02
• 2. 高效分离含锑高的铅锡锑三元合金铅、锡、锑的方法 [P] . 中国专利： CN104593614A . 2015-05-06
• 3. Semiconducting highly antimony-doped silicon prodn. - by doping with antimony alloy to reduce antimony vapour pressure [P] . 德国专利： DE2939541A1 . 1981-04-16

  机译： 半导体高锑掺杂硅产品。 -通过掺杂锑合金来降低锑蒸气压

• 4. Semiconducting highly indium doped silicon prodn. - by doping melt with indium alloy to reduce indium vapour pressure and drawing [P] . 德国专利： DE2939492A1 . 1981-04-16

  机译： 半导体高铟掺杂的硅产品。 -通过用铟合金掺杂熔体以降低铟蒸气压并拉伸

• 5. Semiconducting highly thallium doped silicon prodn. - by doping melt with thallium alloy to reduce thallium vapour pressure and drawing [P] . 德国专利： DE2939460A1 . 1981-04-16

  机译： 半导体高highly掺杂硅产品。 -通过掺入melt合金熔体以降低th的蒸气压并拉伸

• 1. Preparation of highly dispersed antimony-doped tin oxide nanopowders by azeotropic drying with isoamyl acetate [J] . YANG Fen, ZHANG Xue-jun, WU Xu, 中国有色金属学报（英文版） . 2007,第003期
• 2. Preparation of Highly Dispersed Antimony-doped Tin Oxide Nano-powder via Ion-exchange Hydrolysis of SnCl4 and SbCl3 and Azeotropic Drying [J] . YANG Fen, ZHANG Xue-jun, TIAN Fang, 中国航空学报（英文版） . 2007,第002期
• 3. Preparation of Highly Dispersed Antimony-doped Tin Oxide Nano-powder via Ion-exchange Hydrolysis of SnCl4 and SbCl3 and Azeotropic Drying [J] . YANG, Fen, ZHANG, 中国航空学报：英文版 . 2007,第002期
• 4. Laser Induced Optical Properties Modification of Poly（methyl methacrylate） Films Doped with Antimony Trioxide Nanoparticles [J] . Hussein T. Salloom, Wasan A. AI-Taa＇y, Tagreed K. Hamad, 物理科学与应用：英文版 . 2016,第001期
• 5. Antimony doping during formation of self-aligned titanium disilicide by codeposition of titanium and antimony [C] . Conference on the microscopy of semiconducting materials . 1991
• 6. Sodium, strontium and antimony interactions in aluminum-silicon alloy melts and their effects on modification. [D] . Wang, Weixing. 1991
• 7. Water Splitting: Achieving Highly Efficient Photoelectrochemical Water Oxidation with a TiCl4 Treated 3D Antimony‐Doped SnO2 Macropore/Branched α‐Fe2O3 Nanorod Heterojunction Photoanode (Adv. Sci. 7/2015) [O] . Yang‐Fan Xu, Hua‐Shang Rao, Bai‐Xue Chen, 2015
• 8. On the Mechanism of Oxygen Content Reduction by Antimony Doping of Czochralski Silicon Melts [O] . Zhensheng Liu, Torbjrn Carlberg 2016
• 9. Modification of high purity N-type silicon surfaces by antimony delta doping for detector applications [R] . Bandaru, J., Cunningham, T., Hoenk, M. E., 2003

• 1. Structural and Raman Spectroscopic Study of Antimony Doped BiSUB0.5/SUBNaSUB0.5/SUBTiOSUB3/SUBElectroceramic [J] . K. N. Singh ,Versha Sao ,P. Tamrakar . 材料科学与化学工程（英文） . 2015,第8期
• 2. 高锑地质背景区某锑冶炼厂周边土壤锑污染特征及其来源分析 [C] . 宁增平 ,赵彦龙 ,肖青相 . 中国矿物岩石地球化学学会第17届学术年会 . 2019
• 3. 高锑铅阳极泥制备三氯化锑和锑白研究 [A] . 陈进中 . 2012