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Charge transfer configuration esp. for video signal processing - applies charge pulse to chip before data pulse application by time shorter than emission time constant of trapping centres (NL 4.12.78)
Charge transfer configuration esp. for video signal processing - applies charge pulse to chip before data pulse application by time shorter than emission time constant of trapping centres (NL 4.12.78)
The charge transfer configuration esp. for processing video frequency signals, has a semiconductor substrate with a SC layer of a first conduction type, insulated from the surroundings. This layer has a thickness and impurity concentration such that an electric field can generate a depletion region extending through the whole layer thickness, but avoiding a break-through. Data are fed into the layer in the form of charges at one point and read out at another. An electrode system is provided on at least one side of the layer, for capacitive generation of electric fields in the layer, by which the charges are transferred to the reading device. A charge pulse of the same polarity but with an amplitude greater than that of the data charge, is applied to the chip at instants preceding the applied data charge by a time shorter than the emission time constant of the trapping centres of the substrate.
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