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INSTALLATION FOR PRODUCING ELECTROLYTICALLY MICROSCOPIC PASSAGES IN A SEMICONDUCTOR BODY IN PARTICULAR MICROSCOPIC PASSAGES FOR ELECTRONMULTIPLICATION APPLICATIONS AND OPERATING PROCESS OF THE SAME
INSTALLATION FOR PRODUCING ELECTROLYTICALLY MICROSCOPIC PASSAGES IN A SEMICONDUCTOR BODY IN PARTICULAR MICROSCOPIC PASSAGES FOR ELECTRONMULTIPLICATION APPLICATIONS AND OPERATING PROCESS OF THE SAME
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机译：在用于电子倍增应用的特定微细通道中制造半导体本体中的微细通道的安装及其相同的操作过程
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摘要
1530509 Electro-drilling semi-conductors THOMSON-CSF 24 June 1976 [27 June 1975] 26422/76 Heading C7B Microscopic passages are drilled in a semiconductor 1 preferably having no more than 10SP12/SP free charge carriers/cmSP3/SP (e.g. n-type GaAs) by opposing the material to a cathode 5 in an electro- - lyte 11 while injecting "holes" into the rear face 40 in a desired pattern. The potential across the electrodes must be such that the electrical field generated in the semi-conductor extending from the face in contact with the electrolyte reaches at least to the region where the holes are still diffusing into the semi-conductor. In Fig. 1 a conductive SnO 2 layer 3 provides anodic contact and is covered by a mosaic of windows 2 bounded by Mo 4, with visible radiation (wavy arrows) directed thereon to generate the holes. At the point of "hole" emergence into the electrolyte, passages 15 appear via anodic dissolution. In another arrangement, anodic contact is effected via a mosaic of separate, inter-connected ohmic contacts which act also as hole injectors. A basic K 2 Cro 4 solution is specified as electrolyte.
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