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A process for the preparation of a dielectric layer on a bi geo, deep 12 to a depth of 20 - substrate
A process for the preparation of a dielectric layer on a bi geo, deep 12 to a depth of 20 - substrate
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机译：在深12到深20的双地理层上制备介电层的方法-基板
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摘要
A thin (less than 500 mu m) epitaxial dielectric layer having low photoconductivity is grown on a monocrystalline wafer composed of Bi12GeO20 by a liquid-phase epitaxial growth technique. The composition of the liquid melt from which the dielectric layer is grown is composed of a pseudo-three-component system defined by the formula: (Bi2O3)x(GeO2)x(Y+xGa2O3) wherein Y is a component selected from the group consisting of CaO, MgO, BaO, SrO and mixtures thereof and x is a numeral ranging from 0.05 to 5.0. The pseudo-three-component system is so-selected that in a ternary diagram of the three individual components, the mol ratio of Bi2O3:GeO2(Y+xGa2O3) is surrounded by a range connecting points A, B and C on such ternary diagram wherein point A is 0.760:0.002:0.238; point B is 0.994:0.002:0.004; and point C is 0.760:0.236:0.004.
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