a study nietrwalych structural states in semiconductors probkach metals especially dyfraktometryczna method

• 1. 用于增强在三维存储器结构中的开态电流的金属-半导体合金区域 [P] . 中国专利： CN107431071B . 2020.09.08
• 2. 用于增强在三维存储器结构中的开态电流的金属‑半导体合金区域 [P] . 中国专利： CN107431071A . 2017-12-01
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  机译： 研究多晶金属中的调相结构态probkach X射线结构分析方法，尤其是照相方法

• 4. SEMICONDUCTOR DEVICE INCLUDING A METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH THE IMPROVED UNIFORMITY OF STRUCTURAL AND ELECTRICAL PROPERTIES AND A MANUFACTURING METHOD THEREOF [P] . 韩国专利： KR20130098006A . 2013-09-04

  机译： 具有改善的结构和电特性的均匀性的包括金属氧化物半导体场效应晶体管的半导体装置及其制造方法

• 5. METHOD OF FORMING DUAL DAMASCENE STRUCTURAL METAL LINE OF SEMICONDUCTOR DEVICE WITHOUT DAMAGE OF LOWER STRUCTURE [P] . 韩国专利： KR20050002421A . 2005-01-07

  机译： 在不降低下部结构的情况下形成半导体器件的双金属结构双金属线的方法

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