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Semiconductor double hetero laser with stable reliable operation - has laser active zone in layer between layers with greater band sepn. (NL 18.10.77)
Semiconductor double hetero laser with stable reliable operation - has laser active zone in layer between layers with greater band sepn. (NL 18.10.77)
Laser has a body (I) of a first conductivity type and a coating (II) with a laser-active zone (III). The side of (II) towards (I) and the other side of (II) both have a coating (IV, V) with a greater band sepn. than (II), so that (III) is surrounded by an outer zone (VI) with a different effective complex refractive index (CRI) from (III). Pref. (I) consists of a material with a different CRI from (IV). (IV) is the lowest of the layers and has a thin zone of thickness t1 is not 3r (in which r is the path length on which the deviating wave decays by 1/e) and a thick zone of thickness t2 3r. The thickness t 3 of (V) is 3r.
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