LASERS IN INDIRECT-BANDGAP SEMICONDUCTIVE CRYSTALS DOPED WITH ISOELECTRONIC TRAPS

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• 2. 一种基于广义声子晶体半柱壳声波带隙特性的隔声罩 [P] . 中国专利： CN104538022B . 2017.08.04
• 3. LASERS IN INDIRECT-BANDGAP SEMICONDUCTIVE CRYSTALS DOPED WITH ISOELECTRONIC TRAPS [P] . CA968444A . 1975-05-27

  机译： 掺有等电子陷阱的带隙半导晶体中的激光

• 4. LASERS IN INDIRECT-BANDGAP SEMICONDUCTIVE CRYSTALS DOPED WITH ISOELECTRONIC TRAPS [P] . 法国专利： FR2156166A1 . 1973-05-25

  机译： 掺有等电子陷阱的带隙半导晶体中的激光

• 5. LASERS IN INDIRECT-BANDGAP SEMICONDUCTIVE CRYSTALS DOPED WITH ISOELECTRONIC TRAPS [P] . 美国专利： US3761837A . 1973-09-25

  机译： 掺有等电子陷阱的带隙半导晶体中的激光

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