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Process for compensating boundary charges in silicon thin layers epitaxially grown on a substrate
Process for compensating boundary charges in silicon thin layers epitaxially grown on a substrate
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机译：补偿在衬底上外延生长的硅薄层中的边界电荷的方法
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摘要
Process for compensating for the presence of boundary charges in semiconductor layers which are grown on a monocrystalline insulating substrate including the step of introducing doping atoms into the region of the boundary charges. The doping atoms can be introduced before any semiconductor has been deposited after a thin layer of the semiconductor has been epitaxially grown on the substrate, or after all of the epitaxial layer has been grown.
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