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process for the production of gallium arsenide essentially far as galliumschmelze for use as source material in the gas phase epitaxie
process for the production of gallium arsenide essentially far as galliumschmelze for use as source material in the gas phase epitaxie
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机译：基本上与砷化镓用作气相外延材料的砷化镓的生产方法
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摘要
Prepn. of Ga melt satd. with GaAs by passing over molten Ga a mixt. of AsCl3 and H2 is improved by reducing the AsCl3 feed rate as soon as a GaAs crust, which is formed on the Ga melt, reaches such a thickness that the diffusion of As into the inner of the Ga melt is hindered; the feeding of AsCl3 is resumed when the GaAs crust partly dissolves in the melt so that As can again diffuse into Ga. This cycle is repeated until saturation of the melt with GaAs is reached. By this method, excessive development of the GaAs crust (which is undesirable for the gas phase epitaxy) is prevented, and saturation of Ga melt with As is accelerated.
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