Arrangement for the operation of so-called deep depletion - transistors (deep - depletion devices)

• 1. 垂直结构的金刚石深耗尽型场效应晶体管及制备方法 [P] . 中国专利： CN113594230A . 2021-11-02
• 2. 具有屏蔽层的深耗尽型MOS晶体管及其方法 [P] . 中国专利： CN104662666B . 2017.08.22
• 3. arrangement for operation of so-called tiefverarmungs transistors (deep depletion devices) [P] . 德国专利： DE000002322580A . 1974-02-28

  机译： 所谓的tiefverarmungs晶体管（深耗尽器件）的操作装置

• 4. DYNAMIC OPERATION OF DEEP-DEPLETION TRANSISTORS [P] . CA1008518A . 1977-04-12

  机译： 深耗尽型晶体管的动态操作

• 5. DYNAMIC OPERATION OF DEEP-DEPLETION TRANSISTORS [P] . 法国专利： FR2195844B1 . 1977-09-02

  机译： 深耗尽型晶体管的动态操作

• 1. Device Physics Research for Submicron and Deep Submicron Space Microelectronics Devices and Integrated Circuits [J] . 系统工程与电子技术：英文版 . 1992,第004期
• 2. Influence of hysteretic stress path behavior on seal integrity during gas storage operation in a depleted reservoir [J] . Pierre Jeanne, Yingqi Zhang, Jonny Rutqvist 岩石力学与岩土工程学报（英文版） . 2020,第004期
• 3. Optimizing deep learning inference on mobile devices with neural network accelerators [J] . Zeng Xi, Xu Yunlong, Zhi Tian 高技术通讯（英文版） . 2019,第004期
• 4. Improve the Dynamic Breakdown Voltage of SOI LDMOS Devices by Eliminating the Effect of Deep Depletion in Substrate [C] . Yu Cai Asia Energy and Electrical Engineering Symposium . 2021
• 5. CARRIER GENERATION IN DEEPLY DEPLETED MOS-C STRUCTURES. (+ C DENOTES CAPACITANCE) [D] . SMALL, DOUGLAS WARREN -1
• 6. Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device [O] . Yuanyuan Shi, Qi Zhou, Anbang Zhang, 2017
• 7. Determination of the Depletion Depth of the Deep Depletion Charge-Coupled Devices [O] . Man-Ho Kim 2006
• 8. N-Channel Deep-Depletion Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated in Zone-Melting-Recrystallized Polycrystalline Si Films on SiO2 [R] . Tsaur, B. Y., Fan, J. C. C., Mountain, R. W., 1981

• 1. Effect of Depletion Layer on the Total Mobility of AIGaN/GaN High Electron Mobility Transistors [J] . Rajab Yahyazadeh ,Zahra Hashempour . 材料科学与工程：中英文B版 . 2011,第006期
• 2. Specific Emitter Identification for IoT Devices Based on Deep Residual Shrinkage Networks [J] . Peng Tang ,Yitao Xu ,Guofeng Wei . 中国通信 . 2021,第012期
• 3. 超深亚微米耗尽型氮化镓异质结场效应晶体管特性分析 [C] . 王成 . 2016年上海市研究生学术论坛——电子科学与技术 . 2016
• 4. SOI-LDMOS深耗尽效应对动态耐压影响的研究及其在ZVS变换器中的应用 [A] . 雍明阳 . 2018