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EPITAXIAL SILICON ON HYDROGEN MAGNESIUM ALUMINATE SPINEL SINGLE CRYSTALS
EPITAXIAL SILICON ON HYDROGEN MAGNESIUM ALUMINATE SPINEL SINGLE CRYSTALS
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机译：氢铝镁尖晶石单晶上的表观硅
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摘要
An improvement in the manufacture of integrated electronic circuits of the type including an insulating substrate and components occupying isolated portions of an epitaxial layer of a semiconductor material on the substrate, wherein the substrate consists of a plate of single-crystal magnesium aluminate spinel having the formula MgO. x Al2O3 where x = 1.5 to 2.5 and in which the method includes a step of annealing the substrate surface at a temperature of about 900 DEG -1,400 DEG C. The invention also includes an improved unit from which the circuit is made, comprising a single-crystal substrate body of magnesium aluminate spinel having the formula given above, where the spinel crystal contains about 0.00001 to 0.1 percent by weight of included hydrogen, and an epitaxial layer of silicon united to the substrate.
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机译：一种改进类型的集成电路的制造，包括绝缘衬底和占据衬底上半导体材料外延层的隔离部分的组件，其中衬底由具有下式的铝酸镁单晶尖晶石板组成氧化镁xAl 2 O 3，其中x ＝ 1.5至2.5，并且其中所述方法包括在约900℃-1,400℃的温度下对衬底表面进行退火的步骤。本发明还包括一种改进的单元，由该单元制成电路，包括单个电路。 -具有以上给出的式的铝酸镁尖晶石的晶体衬底主体，其中尖晶石晶体包含约0.00001至0.1重量％的所包含的氢，以及与衬底结合的硅外延层。
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