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A method for the production of partial areas in planar semiconductor devices, which, by means of dielectric material with respect to one another and against the remaining regions of the half conductors are insulated body
A method for the production of partial areas in planar semiconductor devices, which, by means of dielectric material with respect to one another and against the remaining regions of the half conductors are insulated body
A method for fabricating dielectric isolated integrated devices which allows the formation of a truly planar surface. The method includes etching isolation channels in a semiconductor substrate through a suitable mask. The mask pattern is designed to enhance deeper etching at certain locations in the isolation channels. A dielectric layer is formed over the exposed surfaces of the isolation channels and a semiconductor material is grown in the channels. The deeper etched locations which are now filled with dielectric isolation are used as a depth guide in the formation of a dielectric layer from the semiconductor substrate surface opposite to the one from which the etching took place. The depth guide can be used in either a deep etch or lap-back process. The last isolation step is then to continue the dielectric layer past the depth guide to the major portion of the isolation channels to produce the fully isolated islands of semiconductor material in the semiconductor substrate.
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