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Schottky contact structures of semiconductor devices and methods of forming such Schottky contact structures
Schottky contact structures of semiconductor devices and methods of forming such Schottky contact structures
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机译：半导体器件的肖特基接触结构和形成如此肖特基接触结构的方法
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摘要
A Schottky contact structure for a semiconductor device having a Schottky contact and an electrode for the contact structure disposed on the contact. The Schottky contact comprises: a first layer of a first metal in Schottky contact with a semiconductor; a second layer of a second metal on the first layer; a third layer of the first metal on the second layer; and a fourth layer of the second metal on the third layer. The electrode for the Schottky contact structure disposed on the Schottky contact comprises a third metal, the second metal providing a barrier against migration between the third metal and the first metal.
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