FERROELECTRIC THIN-FILM STRUCTURES, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE FERROELECTRIC THIN-FILM STRUCTURES

• 1. 铁电薄膜结构以及包括该铁电薄膜结构的电子器件 [P] . 中国专利： CN113345795A . 2021-09-03
• 2. 铁电薄膜结构、形成其的方法和系统及包括其的电子器件 [P] . 中国专利： CN112563323A . 2021-03-26
• 3. FERROELECTRIC THIN-FILM STRUCTURES, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE FERROELECTRIC THIN-FILM STRUCTURES [P] . US2021098595A1 . 2021-04-01

  机译： 铁电薄膜结构，制造方法的方法，以及包括铁电薄膜结构的电子设备

• 4. FERROELECTRIC STRUCTURE, METHOD OF FORMING THE FERROELECTRIC STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE FERROELECTRIC STRUCTURE, AND METHOD OF MANUFACTURING THE FERROELECTRIC STRUCTURE [P] . 韩国专利： KR20070016472A . 2007-02-08

  机译： 铁电结构，形成铁电结构的方法，包括铁电结构的半导体装置以及制造铁电结构的方法

• 5. FERROELECTRIC STRUCTURE, METHOD OF FORMING THE FERROELECTRIC STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE FERROELECTRIC STRUCTURE, AND METHOD OF MANUFACTURING THE FERROELECTRIC STRUCTURE [P] . 韩国专利： KR100729231B1 . 2007-06-15

  机译： 铁电结构，形成铁电结构的方法，包括铁电结构的半导体装置以及制造铁电结构的方法

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• 1. Effect of La Doping on Microstructure and Ferroelectric Prop-erties of Bi_4Ti_3O_(12) Thin Films Prepared by Sol-gel Method [J] . 付承菊 . 武汉理工大学学报：材料科学英文版 . 2008,第5期
• 2. Effect of crystallization temperature on microstructure and ferroelectric property of Bi_(3.25)Eu_(0.75)Ti_3O_(12) thin films prepared by MOD method [J] . 何林 ,张彤 ,唐明华 . 中国有色金属学会会刊：英文版 . 2006,第5期
• 3. 快速退火对PZT铁电薄膜结构和性能的影响 [C] . 李振豪 ,王忠华 ,李琳 . 第五届全国夜视技术交流会暨2005年全国瞬态光学与光电子技术交流会 . 2005
• 4. 铋铁氧基及铌酸钾钠基铁电薄膜结构与物性研究 [A] . 陈欣妍 . 2021