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首页> 外国专利> TRANSPARENT CONDUCTOR MATERIALS WITH ENHANCED NEAR INFRARED PROPERTIES AND METHODS OF FORMING THEREOF

TRANSPARENT CONDUCTOR MATERIALS WITH ENHANCED NEAR INFRARED PROPERTIES AND METHODS OF FORMING THEREOF

机译：具有增强的近红外特性和其形成方法具有增强的透明导体材料

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摘要

A method is provided for manufacturing an article comprising a transparent conductive material, wherein a transparent conductive material (e.g., indium tin oxide) is deposited onto a substrate (e.g., fused silica) by physical vapor deposition, then annealed at high temperature (i.e., at least 450° C.) in a nitrogen atmosphere. The resulting article comprises a transparent conductive material that reduces the trade-off between low resistivity (or sheet resistance) and high near infrared transmission. For example, the transparent conductive material thus obtained may possess a transmission of at least 80% at 1550 nm while having a resistivity of less than or equal to about 5×10−4 Ohm-cm and a Haacke figure of merit of at least about 40×10−4Ω−1. Also provided is a method for modulating the resistivity and/or the near infrared transmission of a transparent conductive material by annealing the transparent conductive material at a high temperature under nitrogen atmosphere.
机译：提供了一种用于制造包含透明导电材料的制品的方法，其中通过物理气相沉积将透明导电材料（例如，氧化铟锡）沉积到基板（例如，熔融二氧化硅）上，然后在高温下退火（即，在氮气氛中至少450℃。所得制品包括透明导电材料，其降低低电阻率（或薄层）和高近红外传输之间的折衷。例如，由此获得的透明导电材料可以在1550nm处具有至少80％的透射，同时具有小于或等于约5×10 -4 / sop>欧姆厘米和哈卡克的电阻率至少约40×10 -4 ω -1 的数字。还提供了一种用于通过在氮气氛下在高温下退火透明导电材料来调制透明导电材料的电阻率和/或近红外传输的方法。

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