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Manufacturing method of neutron semiconductor detection structure, neutron semiconductor detector, and neutron semiconductor detection structure
Manufacturing method of neutron semiconductor detection structure, neutron semiconductor detector, and neutron semiconductor detection structure
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机译:中子半导体检测结构的制造方法,中子半导体检测器和中子半导体检测结构
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摘要
To provide a neutron semiconductor detection structure, a neutron semiconductor detector capable of improving the detection efficiency of neutron, and a manufacturing method of neutron semiconductor detection structure.SOLUTION: A neutron semiconductor detection structure 10 includes: a substrate which has a sapphire substrate 11 and a GaN buffer layer 12; and a neutron detection part 40 formed on the substrate for capturing an incident neutron n. The neutron detection part 40 includes: a GaN body 41 containing gallium nitride (GaN); and plural B-containing bodies 42 containing at least one of boron nitride (BN) and boron gallium nitride (BGaN). The respective B-containing bodies 42 are embedded in the GaN body 41.SELECTED DRAWING: Figure 3
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