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Manufacturing method of neutron semiconductor detection structure, neutron semiconductor detector, and neutron semiconductor detection structure

机译:中子半导体检测结构的制造方法,中子半导体检测器和中子半导体检测结构

摘要

To provide a neutron semiconductor detection structure, a neutron semiconductor detector capable of improving the detection efficiency of neutron, and a manufacturing method of neutron semiconductor detection structure.SOLUTION: A neutron semiconductor detection structure 10 includes: a substrate which has a sapphire substrate 11 and a GaN buffer layer 12; and a neutron detection part 40 formed on the substrate for capturing an incident neutron n. The neutron detection part 40 includes: a GaN body 41 containing gallium nitride (GaN); and plural B-containing bodies 42 containing at least one of boron nitride (BN) and boron gallium nitride (BGaN). The respective B-containing bodies 42 are embedded in the GaN body 41.SELECTED DRAWING: Figure 3
机译:为了提供中子半导体检测结构,能够提高中子的检测效率的中子半导体检测器,以及中子半导体检测结构的制造方法。炫亮:中子半导体检测结构10包括:具有蓝宝石衬底11的基板GaN缓冲层12;并且形成在基板上的中子检测部分40,用于捕获入射中子n。中子检测部分40包括:含有氮化镓(GaN)的GaN主体41;含有含硼(BN)和氮化硼(BGAN)中的至少一种的含多种B体42。含相应的B体42嵌入GaN主体41中。选择图:图3

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