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GALLIUM-NITRIDE-BASED TRANSCAPS FOR MILLIMETER WAVE APPLICATIONS
GALLIUM-NITRIDE-BASED TRANSCAPS FOR MILLIMETER WAVE APPLICATIONS
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机译：用于毫米波应用的基于氮化镓基转速
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摘要
Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a first semiconductor region having a first doping type, a second semiconductor region having a second doping type different from the first doping type, a third semiconductor region disposed between the first semiconductor region and the second semiconductor region, a first terminal disposed adjacent to the first semiconductor region, a second terminal disposed adjacent to the second semiconductor region, and a third terminal disposed above the third semiconductor region. The first semiconductor region, the second semiconductor region, and/or the third semiconductor region include gallium nitride. The third semiconductor region includes multiple semiconductor layers having different materials. A capacitance between the first terminal and the third terminal is configured to be adjusted by varying a control voltage applied to at least one of the first terminal or the second terminal.
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