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PROCEDURES FOR THE FORMATION OF STARTED SCHOOLS AND ASSOCIATED BUILDINGS
PROCEDURES FOR THE FORMATION OF STARTED SCHOOLS AND ASSOCIATED BUILDINGS
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机译：组建开始学校和相关建筑的程序
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摘要
A process involves etching a semiconductor substrate to form a ditch, where the semiconductor substrate has a side wall facing the ditch, and separating a first semiconductor layer extending into the ditches. The first semiconductor layer has a first floor part on a bottom of the ditch and a first side wall part on the side wall of the semiconductor substrate. The first side wall is removed to reveal the side wall of the semiconductor substrate. The procedure also includes the separation of a second semiconductor layer extending into the ditches,where the second semiconductor layer has a second floor part above the first floor part and a second side wall that contacts the side wall of the semiconductor substrate. The second side wall is removed to reveal the side wall of the semiconductor substrate.
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