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Graded hardmask interlayer for enhanced extreme ultraviolet performance
Graded hardmask interlayer for enhanced extreme ultraviolet performance
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机译：用于增强极端紫外线性能的分级硬掩模夹层
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摘要
A patterning stack and methods are provided for semiconductor processing. The method includes forming a graded hardmask, the graded hardmask including a first material and a second material with extreme ultraviolet (EUV) absorption cross sections for absorption of EUV wavelengths, the second material configured to provide adhesion to photoresist materials. The method also includes depositing a photoresist layer over the graded hardmask. The method additionally includes patterning the photoresist layer. The method further includes etching the graded hardmask. The method also includes removing the photoresist layer.
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