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DEEP JUNCTION LOW-GAIN AVALANCHE DETECTOR
DEEP JUNCTION LOW-GAIN AVALANCHE DETECTOR
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机译：深度结低增益雪崩探测器
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摘要
An avalanche diode including a gain region and a readout structure including an n-type (p-type) region having electrically isolated segments each including implanted regions; a p-type (n-type) region; and a first electrode on each of the segments. The gain region includes a p-n junction buried between the n-type region and the p-type region: an n+ -type region having a higher n- type dopant density than the n-type region; a p+-type region having a higher p- type dopant density than the p-type region; and the p-n junction between the n+-type region and the p+-type region. A bias between the first electrodes and a second electrode (ohmically contacting the p-type (n-type) region) reverse biases the p-n junction. Electrons generated in response to electromagnetic radiation or charged particles generate additional electrons m the gain region through impact ionization but the segmented region comprises a low field region isolating the gain region from the first electrodes.
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