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INTEGRATED METHOD FOR SILICON OPTICAL ADAPTER PLATE AND THREE-DIMENSIONAL ARCHITECTURE AND FOR SURFACE ELECTRODE ION TRAP, SILICON OPTICAL DEVICE AND THREE-DIMENSIONAL ARCHITECTURE, INTEGRATED STRUCTURE AND THREE-DIMENSIONAL ARCHITECTURE
INTEGRATED METHOD FOR SILICON OPTICAL ADAPTER PLATE AND THREE-DIMENSIONAL ARCHITECTURE AND FOR SURFACE ELECTRODE ION TRAP, SILICON OPTICAL DEVICE AND THREE-DIMENSIONAL ARCHITECTURE, INTEGRATED STRUCTURE AND THREE-DIMENSIONAL ARCHITECTURE
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机译：硅光学适配器板和三维架构的集成方法和表面电极离子阱，硅光学装置和三维架构，集成结构和三维架构
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摘要
An integrated method for a silicon optical adapter adapter plate and a three-dimensional architecture, capable of making the chip encapsulation area smaller, and achieving a higher integration level, a smaller electrical signal delay and a higher bandwidth and speed, and an integrated method for a surface electrode ion trap, a silicon optical device and a three-dimensional architecture, an integrated structure and a three-dimensional architecture with a strong stability, miniaturization, versatility and expandability. The integration of the three-dimensional architecture is realized on the basis of the integration of a through-silicon via and a silicon optical device, so that the integrated chip area can be smaller and the integration level can be higher, and the formed three-dimensional architecture has a smaller electrical signal delay and a higher bandwidth and speed. The surface electrode ion trap is integrated with a silicon single-photon avalanche detector or a silicon-based germanium single-photon avalanche detector, a silicon grating and/or a silicon nitride grating and a through-silicon via. After being powered on, the surface electrode ion trap is used to capture ions and trap same in a certain range. A laser source is coupled to the silicon grating and/or the silicon nitride grating by using any coupling mode such as end-face coupling. The laser is emitted to the ions via the silicon grating and/or the silicon nitride grating on three orientations to complete addressing. The ions can undergo energy level transition after being excited by light. After energy level transition, the ions can radiate fluorescent light. The fluorescent light is detected by the silicon single-photon avalanche detector or the silicon-based germanium single-photon avalanche detector, and the detection of quantum bit information is finally completed.
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