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REQUIRED FIRE GATE ELECTRODS FOR SHORT-TERM, HALF-TERM AND GATE STRUCTURE PROCEDURES
REQUIRED FIRE GATE ELECTRODS FOR SHORT-TERM, HALF-TERM AND GATE STRUCTURE PROCEDURES
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机译：用于短期，半术和栅极结构程序所需的火栅电极
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摘要
Gate structure for adapting the effective output work of a semiconductor unit, comprising:a gate dielectric on a channel zone of the semiconductor unit; andan electrode setting an output, having a first metal tride in direct contact with the gate dielectric, a molded material layer of an aluminium carbide and a second metal tride in direct contact with the molded material layer of the aluminium carbide, where the tailored material layer of aluminium carbide Al4C3 in combination with a nitride containing titanium and aluminium or a combination of both a carbide containing titanium and aluminium and a nitride containing both titanium and aluminium.
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