首页> 外国专利> ARRANGEMENT UND METHOD FOR THE GRADUAL SHUTOFF OF POTENTIAL IN HIGH VOLTAGE TECHNOLOGY

ARRANGEMENT UND METHOD FOR THE GRADUAL SHUTOFF OF POTENTIAL IN HIGH VOLTAGE TECHNOLOGY

机译:安排und方法,用于高压技术逐步关闭潜力

摘要

The invention relates to an arrangement (27) and to a method for the gradual shutoff of potential in high voltage technology, comprising at least one armature body (28), electrically insulating film (29), and electrically conductive regions (4), wherein the electrically conductive regions (4) are arranged between layers of the electrically insulating films (29), and at least parts of the electrically insulating film (29) are arranged around the at least one armature body (28). The arrangement (27) is designed for direct current applications, wherein resistive compensation currents are reduced and/or avoided along the electrically insulating film (29) by configuration for higher voltage levels, and/or by an armature body (28), which functions as a first gradual potential shutoff coating, and/or by means of the electrical contacting of the outermost electrically conductive region (4) between layers of electrically insulating film (29) via an electrical contact (30) through an opening (31) in the outer layer of the insulating film (29).
机译:本发明涉及一种装置(27)和用于高压技术逐步关闭电位的方法,包括至少一个电枢主体(28),电绝缘膜(29)和导电区域(4),其中导电区域(4)布置在电绝缘膜(29)的层之间,并且电绝缘膜(29)的至少部分围绕所述至少一个电枢主体(28)布置。该装置(27)设计用于直流应用,其中通过用于更高电压电平的配置和/或通过电枢体(28),沿着电绝缘膜(29)减小和/或避免电阻补偿电流。作为第一逐渐逐渐逐渐截止涂层,和/或通过通过电触头(30)通过电触头(31)在电绝缘膜(29)的层之间的电接触通过开口(31)的电触点(31)之间的电接触。绝缘膜的外层(29)。

著录项

  • 公开/公告号EP3830848A1

    专利类型

  • 公开/公告日2021-06-09

    原文格式PDF

  • 申请/专利权人 SIEMENS ENERGY GLOBAL GMBH & CO. KG;

    申请/专利号EP20190761737

  • 发明设计人 MÜLLER SEBASTIAN;PRUCKER UDO;

    申请日2019-08-08

  • 分类号H01F38/30;H01B17/28;

  • 国家 EP

  • 入库时间 2022-08-24 19:15:59

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