首页> 外国专利> NEUTRON DETECTORS AND METHODS OF FABRICATING THE SAME USING BORON AS NEUTRON CONVERSION LAYER AND CONFORMAL DOPING SOURCE

NEUTRON DETECTORS AND METHODS OF FABRICATING THE SAME USING BORON AS NEUTRON CONVERSION LAYER AND CONFORMAL DOPING SOURCE

机译:中子探测器和使用硼作为中子转换层和保形掺杂源相同的方法

摘要

Thermal neutron detectors and methods of fabricating the same are provided. A thermal neutron detector can use boron in both the neutron conversion layer and as a source for conformal doping in a semiconductor substrate. The neutron detector can be a micro-structured diode with cavities having a depth of 60 microns or less. The boron can be filled in the cavities and diffused into the semiconductor substrate via a diffusion annealing process.
机译:提供热中子探测器和制造方法。热中子探测器可以在中子转换层中使用硼和作为半导体衬底中的共形掺杂的源。中子探测器可以是微结构二极管,其空腔具有60微米或更小。硼可以填充在空腔中并经由扩散退火过程漫射到半导体衬底。

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