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How to Create Patterning Device Patterns at Patch Boundaries
How to Create Patterning Device Patterns at Patch Boundaries
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机译：如何在补丁边界中创建图案化设备模式
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摘要
A method of generating a mask pattern to be used in a patterning process is described herein. The method includes (i) a first feature patch 301 comprising a first polygonal portion of an initial mask pattern, and (ii) a second patcher patch 302 comprising a second polygonal portion of the initial mask pattern. ) to obtain (P301); adjusting a second polygonal portion at the patch boundary between the first feature patch and the second feature patch so that the difference between the first polygonal portion and the second polygonal portion at the patch boundary is reduced (P303); and forming a mask pattern 330 by combining the first polygonal portion and the adjusted second polygonal portion at the patch boundary (P305).
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