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How to reduce the effect of basal plane potential on the epitaxial layer of a silicon carbide substrate
How to reduce the effect of basal plane potential on the epitaxial layer of a silicon carbide substrate
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机译：如何降低碳化硅基材外延层对基底平面电位的影响
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摘要
The present invention relates to a method for reducing the effect of basal plane dislocation on an epitaxial layer of a silicon carbide substrate, wherein the BPD-TED turning point is moved downward on the silicon carbide substrate by using an interfacial high-temperature annealing process on the surface of a heavily doped buffer layer. promote the distance away, add a graded buffer layer to reduce the concentration difference between the high concentration doping buffer layer and the epitaxial layer, restore the interface of the high concentration doping buffer layer etched with high-temperature hydrogen gas, and lateral epitaxial epitaxial layer under low-speed epitaxial mode The surface quality of the subsequent epitaxial layer is improved by repairing the surface corrosion pits of the buffer layer through the taxial growth enhancing properties. The method lowers the basal plane dislocation transition point below the interface of the heavily doped buffer layer, effectively lowering the probability that the basal plane dislocation in the epitaxial layer induces layer dislocation defects under the action of a large current, and the process can be applied to a conventional epitaxial process.
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