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Method and apparatus for etching boron doped p-type silicon wafer
Method and apparatus for etching boron doped p-type silicon wafer
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机译：用于蚀刻硼掺杂P型硅晶片的方法和装置
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摘要
To provide a vapor phase etching method of a low-resistance boron-doped p-type silicon wafer, by which a recovery liquid scanned on a wafer surface subjected to etching can be collected at a high recovery rate.SOLUTION: A method for etching a boron-doped p-type silicon wafer comprises the steps of preparing an etching gas by introducing an ozone-containing gas and a hydrofluoric acid mist into a chamber and mixing them, and performing vapor phase decomposition of a surface region of the boron-doped p-type silicon wafer by bringing a surface of the boron-doped p-type silicon wafer of 0.016 Ωcm or less in resistivity into contact with the etching gas. The method further comprises the steps of introducing the ozone-containing gas into the chamber at a flow rate of 3000 sccm or more, and preparing the hydrofluoric acid mist by atomizing hydrofluoric acid of 41 mass% or more in hydrofluoric acid concentration.SELECTED DRAWING: None
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