首页>
外国专利>
THIN FILM RESISTOR (TFR) FORMED IN AN INTEGRATED CIRCUIT DEVICE USING AN OXIDE CAP LAYER AS A TFR ETCH HARDMASK
THIN FILM RESISTOR (TFR) FORMED IN AN INTEGRATED CIRCUIT DEVICE USING AN OXIDE CAP LAYER AS A TFR ETCH HARDMASK
展开▼
机译:在集成电路器件中形成的薄膜电阻(TFR)使用氧化物盖层作为TFR蚀刻硬掩模
展开▼
页面导航
摘要
著录项
相似文献
摘要
A process is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. An oxide cap is formed over the TFR film, which acts as a hardmask during a TFR etch of the TFR film to define a TFR element, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer. TFR edge spacers may be formed over lateral edges of the TFR element to insulate such TFR element edges. TFR contact openings are etched in the oxide cap over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element.
展开▼