首页> 外国专利> THIN FILM RESISTOR (TFR) FORMED IN AN INTEGRATED CIRCUIT DEVICE USING AN OXIDE CAP LAYER AS A TFR ETCH HARDMASK

THIN FILM RESISTOR (TFR) FORMED IN AN INTEGRATED CIRCUIT DEVICE USING AN OXIDE CAP LAYER AS A TFR ETCH HARDMASK

机译:在集成电路器件中形成的薄膜电阻(TFR)使用氧化物盖层作为TFR蚀刻硬掩模

摘要

A process is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. An oxide cap is formed over the TFR film, which acts as a hardmask during a TFR etch of the TFR film to define a TFR element, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer. TFR edge spacers may be formed over lateral edges of the TFR element to insulate such TFR element edges. TFR contact openings are etched in the oxide cap over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element.
机译:提供了一种用于在集成电路(IC)装置中形成薄膜电阻(TFR)的过程。 在包括IC元件和IC元件触点的IC结构上形成和退火TFR膜。 在TFR膜上形成氧化物帽,其在TFR膜的TFR蚀刻期间用作硬掩模以限定TFR元件,这可以消除光掩模的使用,从而消除了光掩模聚合物的蚀刻后去除。 TFR边缘间隔物可以形成在TFR元件的横向边缘上以防止这种TFR元件边缘。 TFR接触开口在TFR元件上蚀刻在氧化物帽上,并且在IC结构上形成金属层并延伸到TFR接触开口中,以形成与IC元件触头和TFR元件的金属触点。

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