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SiGeSn VIRTUAL SUBSTRATE FORMED BY MOLECULAR BEAM EPITAXY ON A Si SUBSTRATE FOR THE STRAINED GROWTH OF GeSn
SiGeSn VIRTUAL SUBSTRATE FORMED BY MOLECULAR BEAM EPITAXY ON A Si SUBSTRATE FOR THE STRAINED GROWTH OF GeSn
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机译：通过Si衬底上的分子束外延形成的Sigesn虚拟基板，用于GESN的应变生长
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摘要
A method of growing fully relaxed SiGeSn buffer layers on Si substrates to produce virtual substrates for the epitaxial growth of high quality GeSn films suitable for high performance infrared (IR) optoelectronic device technology directly integrated on silicon. Growing the SiGeSn virtual substrate uses a precisely decreasing growth temperature and Si flux and a precisely increasing Ge and Sn flux. The virtual substrates may have a slightly larger lattice constant than that of the target GeSn alloy to impose a precise degree of tensile strain resulting in a direct band gap for the target GeSn alloy.
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