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RESISTANCE-CHANGE MATERIAL LAYER AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME
RESISTANCE-CHANGE MATERIAL LAYER AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME
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机译：电阻变化材料层和相变存储器件包括相同的
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摘要
Disclosed are a resistive material film and a resistive memory device including the same. The resistance change material layer includes germanium (Ge), antimony (Sb), tellurium (Te), and at least one impurity (X), X p (Ge a Sb (1-ab) Te b ) (1-p) is displayed as The atomic concentration p of the impurity is 0 < p ≤ 0.2, the atomic concentration a of germanium is 0.05 ≤ a < 0.19, and the atomic concentration b of the tellurium is 0.42 ≤ b ≤ 0.56.
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机译：公开了包括该电阻材料膜和包括该电阻存储器件。 电阻变化材料层包括锗（Ge），锑（Sb），碲（Te）和至少一个杂质（x），x p（ge a sb（1-ab）te b）（1-p）是 显示为杂质的原子浓度p为0 ≤0.2，锗的原子浓度a为0.05≤<0.19，碲的原子浓度B为0.42≤b≤0.56。
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