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EUV EUV SUBSTRATE WITH MULTILAYERED REFLECTIVE FILM REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY REFLECTIVE MASK FOR EUV LITHOGRAPHY PROCESS FOR PRODUCING SAME AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
EUV EUV SUBSTRATE WITH MULTILAYERED REFLECTIVE FILM REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY REFLECTIVE MASK FOR EUV LITHOGRAPHY PROCESS FOR PRODUCING SAME AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
An object of the present invention is to provide a substrate provided with a multilayer reflective film that provides a reflective mask having high reflectance and excellent cleaning resistance. The present invention provides a substrate, a multilayer reflective film formed on the substrate, a layer containing Si as a high refractive index material, and a layer containing a low refractive index material, and a plurality of layers are periodically laminated, and the multilayer reflective film is formed on the multilayer reflective film. It has a Ru protective film for protecting the reflective film, and the surface layer of the multilayer reflective film opposite to the substrate is a layer containing the Si, and between the multilayer reflective film and the Ru protective film, the transition of Si to the Ru protective film is prevented. It is a board|substrate provided with the multilayer reflective film which has an obstructive block layer, and at least a part of the said Si is diffused into the said block layer.
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