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STRUCTURE OF INFRARED BAND-PASS FILTER AND INFRARED BAND-PASS FILTER USING THE STRUCTURE

机译:使用该结构的红外带式过滤器和红外带通滤波器的结构

摘要

STRUCTURE OF INFRARED BAND-PASS FILTER AND INFRARED BAND-PASS FILTER USING THE STRUCTURE An infrared band-pass filter structure (20) is formed by alternately stacking a plurality of layers of hydride. aluminum and silicon (21) and a plurality of low refractive index layers (22). The plurality of low refractive index layers (22) include oxide. The infrared bandpass filter structure (20) has a bandwidth that at least partially overlaps the wavelength range of 800nm-1600nm. The bandwidth has a central wavelength, and the central wavelength has an offset amplitude which is less than 11nm when an angle of incidence changes from 0 ° to 30 °. The invention further relates to an infrared band-pass filter which comprises the infrared band-pass filter structure (20) formed on a first side surface of a substrate (10) and an anti-reflective layer (30) formed on a substrate (10). second side surface of the substrate (10) which is at a side opposite to the first side surface. Figure to be published with the abstract: Figure 1
机译:红外带通滤波器的结构和使用该结构的红外带通滤波器通过交替堆叠多层氢化物来形成红外带通滤波器结构(20)。铝和硅(21)和多个低折射率层(22)。多个低折射率层(22)包括氧化物。红外带通滤波器结构(20)具有至少部分地重叠800nm-1600nm的波长范围的带宽。带宽具有中心波长,并且中央波长具有小于11nm的偏移幅度,当入射角从0°变为30°时。本发明还涉及一种红外带通滤光器,其包括形成在基板(10)的第一侧表面上的红外带式滤光器结构(20)和形成在基板上的抗反射层(30)(10 )。基板(10)的第二侧表面,其位于与第一侧表面相对的一侧。用摘要发布图:图1

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