首页> 外国专利> Pattern forming method, method for manufacturing electronic device, monomer for producing resin for semiconductor device manufacturing process, resin, method for producing resin, actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film

Pattern forming method, method for manufacturing electronic device, monomer for producing resin for semiconductor device manufacturing process, resin, method for producing resin, actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film

机译：图案形成方法，制造电子器件的制造方法，制造半导体器件制造工艺，树脂，生产树脂的制造方法，形成树脂，光化射线敏感或辐射敏感树脂组合物，以及光学射线敏感或辐射敏感膜

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摘要

Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.

机译：提供了一种图案形成方法，包括使用含有由具有硅原子获得的树脂（A）的树脂组合物形成薄膜的成膜步骤，基于JIS K0101：1998的浊度为1ppm或更小的单体的单体使用ModAZin作为参考材料和作为测量系统的集成球测量系统，其中图案形成方法能够显着提高浮渣缺陷性能，特别是在形成超细图案（例如，线条空间图案线宽为50nm或更小，或孔径为50nm或更小的孔图案）; 以及使用图案形成方法的制造电子设备的方法。

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公开/公告号US11150557B2

专利类型
公开/公告日2021-10-19

原文格式PDF
申请/专利权人 FUJIFILM CORPORATION;
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申请/专利号US201816014161
发明设计人 NAOYA HATAKEYAMA;AKIYOSHI GOTO;YASUNORI YONEKUTA;
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申请日2018-06-21
分类号G03F7/038;C08F30/04;G03F7/075;G03F7/039;G03F7/32;G03F7/20;
国家 US
入库时间 2022-08-24 21:45:07

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