METHOD AND APPARATUS FOR MANUFACTURING NANOSTRUCTURES FROM A MATERIAL LAYER HAVING A THICKNESS BELOW 1 µm

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• 2. 用于制造具有微米或纳米结构导电层的材料的方法 [P] . 中国专利： CN105247697A . 2016-01-13
• 3. METHOD AND APPARATUS FOR MANUFACTURING NANOSTRUCTURES FROM A MATERIAL LAYER HAVING A THICKNESS BELOW 1 µm [P] . EP3914964A1 . 2021-12-01

  机译： 用于从厚度低于1μm的材料层制造纳米结构的方法和装置

• 4. METHOD AND APPARATUS FOR MANUFACTURING NANOSTRUCTURES FROM A MATERIAL LAYER HAVING A THICKNESS BELOW 1 µm [P] . 世界知识产权组织专利： WO2020152316A1 . 2020-07-30

  机译： 从厚度小于1 µm的材料层制造纳米结构的方法和装置

• 5. Apparatus and method for measuring film thickness of silicon epitaxial layer in epitaxial silicon wafer with embedded diffusion layer, and method for manufacturing epitaxial silicon wafer with embedded diffusion layer using the film thickness measuring apparatus or the method for measuring film thickness [P] . 日本专利： JP2020101460A . 2020.07.02

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