首页> 外国专利> PROCESS FOR FORMING A NON-VOLATILE MEMORY CELL, NON-VOLATILE MEMORY CELL SHAPED ACCORDING TO THIS PROCESS AND MICROELECTRONIC DEVICE INCLUDING SUCH MEMORY CELLS

PROCESS FOR FORMING A NON-VOLATILE MEMORY CELL, NON-VOLATILE MEMORY CELL SHAPED ACCORDING TO THIS PROCESS AND MICROELECTRONIC DEVICE INCLUDING SUCH MEMORY CELLS

机译：形成非易失性存储器单元的过程，根据该过程和包括这种存储器单元的微电子器件形状的非易失性存储器单元

页面导航

摘要
著录项
相似文献

摘要

The invention relates to a method of forming (100) a non-volatile memory cell for switching said memory cell (10) from an untrained state to a formed state, said memory cell comprising an ordered stack of a. lower electrode (12), a layer of insulating material (13) and an upper electrode (11). This forming process comprises a breakdown operation (130) in which at least one laser shot is emitted towards the layer of insulating material (13) to make said layer of insulating material active by causing it to pass from a highly resistant state (state HRS) in a weakly resistant state (LRS state), the memory cell being formed when the layer of insulating material is active. The invention also relates to a non-volatile memory cell (10), the layer of insulating material (1 3) of which is made active by the above forming method.

机译：本发明涉及一种形成（100）非易失性存储器单元的方法，用于将所述存储器单元（10）从未训练的状态切换到形成状态，所述存储器单元包括一个有序堆栈。下电极（12），绝缘材料层（13）和上电极（11）。该形成过程包括击穿操作（130），其中至少一个激光射击朝向绝缘材料层（13）的层发射，以使所述绝缘材料层通过使其通过高度抗性状态（状态HRS）来制备所述绝缘材料层。在弱状态（LRS状态）中，当绝缘材料层有效时，将形成存储器单元。本发明还涉及一种非易失性存储器电池（10），其绝缘材料层（13）通过上述形成方法使其活跃。

著录项

公开/公告号FR3064395B1

专利类型
公开/公告日2021-12-10

原文格式PDF
申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES;UNIVERSITE DAIX-MARSEILLE;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS;
展开▼

申请/专利号FR20170052398
发明设计人 KRAKOVINSKY ALEXIS;BOCQUET MARC;COIGNUS JEAN;DELLA MARCA VINCENZO;PORTAL JEAN-MICHEL;WACQUEZ ROMAIN;
展开▼

申请日2017-03-23
分类号G11C7/20;G11C11/21;H01L21/64;
国家 FR
入库时间 2022-08-24 22:45:52

相似文献

专利
外文文献
中文文献