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Sub-threshold voltage formation of selectors in crosspoint memory arrays
Sub-threshold voltage formation of selectors in crosspoint memory arrays
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机译：交叉点存储器阵列中选择器的子阈值电压形成
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摘要
PROBLEM TO BE SOLVED: To provide a device and a technique for forming a selector in a memory device such as a crosspoint memory array. In a memory array containing a storage node, a threshold switching selector is in series with a resistance switching memory cell in the storage node. Prior to the first switching operation in the array, a stimulus is applied to the storage node to transform the selector from the initial state with the initial threshold voltage to the operating state with the lower operating threshold voltage. The stimulus can include a signal having a voltage that does not exceed the operating threshold voltage. To limit peak current consumption, the stimulus can be applied one subset at a time to different subsets of the array. [Selection diagram] FIG. 8A
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