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PROBE CARD FOR HIGH-TEMPERATURE HIGH-VOLTAGE TEST OF POWER DEVICE

机译:功耗高温高压试验探针卡

摘要

A probe card for a high-temperature high-voltage test of a power device, relating to the technical field of semiconductor device tests. The probe card is sequentially provided with an air inlet system (1), a PCB (2), a transfer layer (3), a guide plate (4), and a probe (5) from top to bottom; a plurality of lower air outlets (1-1) and side air outlets (1-2) are formed at the bottom of the air inlet system (1); first through holes (2-1) having the same position, shape and number as the lower air outlet holes (1-1) are distributed on the PCB (2); second through holes (3-1) having the same position, shape and number as the lower air outlet holes (1-1) are distributed on the transfer layer (3); third through holes (4-1) having the same position, shape and number as the lower air outlet holes (1-1) are distributed on the guide plate (4); the lower air outlet holes (1-1), the first through holes (2-1), the second through holes (3-1), and the third through holes (4-1) are coaxially arranged; high-temperature high-pressure gas jetted from the lower air outlet holes (1-1) sequentially passes through the first through holes (2-1), the second through holes (3-1), and the third through holes (4-1) and then is blown between the guide plate (4) and a tested wafer (6). According to the present invention, abnormal discharge between the probes (5) in a high-voltage environment and buckling deformation of the probe card and position drift of the probe (5) in a high-temperature environment can be suppressed at the same time.
机译:用于高温高压测试的探针卡,与半导体器件测试技术领域有关。探针卡依次设置有空气入口系统(1),PCB(2),转印层(3),引导板(4),以及从上到下的探针(5);在空气入口系统(1)的底部形成多个下空气出口(1-1)和侧向空气出口(1-2);第一通孔(2-1)具有相同的位置,形状和数量,作为下部空气出口孔(1-1)分布在PCB(2)上;具有与下部空气出口孔(1-1)相同的位置,形状和数量的第二通孔(3-1)分布在转印层(3)上;第三通孔(4-1)具有与下部出口孔(1-1)相同的位置,形状和数量在导板(4)上分布;较低的空气出口孔(1-1),第一通孔(2-1),第二通孔(3-1)和第三通孔(4-1)是同轴布置的;从下部空气出口孔(1-1)喷射高温高压气体,顺序地穿过第一通孔(2-1),第二通孔(3-1),以及第三通孔(4- 1)然后在引导板(4)和测试的晶片(6)之间吹。根据本发明,同时可以抑制高压环境中的探针(5)与探针卡的屈曲卡和探针(5)的位置漂移之间的异常放电可以在高温环境中抑制。

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