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Single cone growth method for long-type crystals of KDP-based crystals

机译:基于KDP基晶体的长型晶体的单锥生长方法

摘要

A single conical growth method for long-seed crystals of KDP-based crystals, the growth method provided by the present invention, in which the lower end of the long-seed crystal is restricted by the lower tray, the upper end grows freely in a conical shape, and at the same time. The four column planes in the two directions [100] and [010] can grow, there is no problem of growth stress in the crystal growth process, and all the cut optical elements have very high optical quality. The growth process is the simultaneous growth of four columnar surfaces with very similar growth environments and is agitated by a blade-like stirring paddle in the crystal growth process, so that all cut optics have very high optical uniformity. Be prepared. Due to the unique cutting angle of the triple-multiplying element of the KDP-based crystal, the cutting efficiency when cutting the triple-multiplying element using the crystal grown in the present invention is very high, and the size of the horizontal dimension of the grown crystal is large. The area of the maximum triple-multiplying element that can be cut can also be known in advance. [Selection diagram] Fig. 2
机译:基于KDP基晶体的长种子晶体的单个锥形生长方法,本发明提供的生长方法,其中长籽晶的下端受到下托盘的限制,上端在a中自由增长圆锥形,同时。两个方向[100]和[010]中的四个柱平面可以生长,在晶体生长过程中没有生长应力的问题,并且所有切割光学元件都具有非常高的光学质量。生长过程是具有非常相似的生长环境的四个柱状表面的同时生长,并且在晶体生长过程中通过叶片搅拌桨搅拌,使得所有切割光学器件具有非常高的光学均匀性。准备好。由于基于KDP的晶体的三倍乘以元件的独特切削角,使用本发明生长的晶体切割三倍乘以元件时的切削效率非常高,并且水平尺寸的尺寸生长的水晶很大。可以提前知道可以切割的最大三倍乘以元件的区域。 [选择图]图2

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