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Pixels for Semiconductor Image Sensors and Methods for Manufacturing Pixels
Pixels for Semiconductor Image Sensors and Methods for Manufacturing Pixels
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机译：半导体图像传感器的像素和制造像素的方法
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摘要
A pixel (1) with improved quantum efficiency includes a semiconductor body (2) having a first fore surface (3) composed of an incident surface and a light capture region (4a) configured to capture light incident on the first surface (3) do. The pixel comprises a structured interface 5 , an insulating layer 6 on at least two surfaces 7 of the semiconductor body perpendicular to the first surface 3 , and a first at an angle of incidence α smaller than the critical angle αc. It further comprises a filter element arranged at a distance from the first surface (3) such that light incident on the surface (3) impinges on the filter element (8).
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