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Field Effect Transistor Constructions And Methods Of Programming Field Effect Transistors To One Of At Least Three Different Programmed States
Field Effect Transistor Constructions And Methods Of Programming Field Effect Transistors To One Of At Least Three Different Programmed States
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机译：场效应晶体管构造与编程场效应晶体管到至少三种不同编程状态之一的方法
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摘要
A field effect transistor construction includes a semiconductive channel core. A source/drain region is at opposite ends of the channel core. A gate is proximate a periphery of the channel core. A gate insulator is between the gate and the channel core. The gate insulator has local regions radially there-through that have different capacitance at different circumferential locations relative to the channel core periphery. Additional constructions, and methods, are disclosed.
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