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SILICON-PHOTONICS-BASED SEMICONDUCTOR OPTICAL AMPLIFIER WITH N-DOPED ACTIVE LAYER

机译：掺氮有源层硅光电子基半导体光放大器

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摘要

A semiconductor optical amplifier for high-power operation includes a gain medium having a multilayer structure sequentially laid with a P-layer, an active layer, a N-layer from an upper portion to a lower portion in cross-section thereof The gain medium is extendedly laid with a length L from a front facet to a back facet. The active layer includes multiple well layers formed by undoped semiconductor material and multiple barrier layers formed by n-doped semiconductor materials. Each well layer is sandwiched by a pair of barrier layers. The front facet is characterized by a first reflectance Rf and the back facet is characterized by a second reflectance Rb. The gain medium has a mirror loss am about 40-200 cm-1 given by: αm =(1/2L)ln{1/(Rf×Rb)}.

机译：一种用于大功率操作的半导体光放大器包括增益介质，该增益介质具有多层结构，在其横截面上从上部分到下部分依次铺设有P层、有源层、N层。增益介质以长度L从前端面到后端面延伸铺设。该有源层包括由未掺杂半导体材料形成的多个阱层和由n掺杂半导体材料形成的多个阻挡层。每层井被一对阻挡层夹在中间。前刻面由第一反射Rf表征，后刻面由第二反射Rb表征。增益介质的镜像损耗am约为40-200cm-1，由αm=（1/2L）ln{1/（Rf×Rb）}给出。

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公开/公告号EP3972063A1

专利类型
公开/公告日2022-03-23

原文格式PDF
申请/专利权人 MARVELL ASIA PTE LTD.;
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申请/专利号EP20210197432
发明设计人 HE XIAOGUANG;NAGARAJAN RADHAKRISHNAN L.;
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申请日2021-09-17
分类号H01S5/50;H01S5/028;H01S5/14;H01S5/30;H01S5;H01S5/02;H01S5/10;H01S5/20;H01S5/32;H01S5/343;
国家 EP
入库时间 2022-08-25 00:02:05

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