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BULK-ACOUSTIC WAVE RESONATOR AND METHOD FOR FABRICATING BULK-ACOUSTIC WAVE RESONATOR

机译:BULK-ACOUSTIC波谐振器和方法捏造BULK-ACOUSTIC波谐振器

摘要

A bulk-acoustic wave resonator includes: a substrate; and a resonator including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc), the content of scandium in the piezoelectric layer is 10 wt % to 25 wt %, and the piezoelectric layer has a leakage current density of 1 μA/cm2 or less.
机译:

著录项

  • 公开/公告号US2022209737A1

    专利类型

  • 公开/公告日2022-06-30

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRO-MECHANICS CO. LTD.;

    申请/专利号US202117337899

  • 发明设计人 TAE KYUNG LEE;JAE GOON AUM;

    申请日2021-06-03

  • 分类号H03H9/02;H03H3/02;H03H9/17;

  • 国家

  • 入库时间 2023-06-25 23:54:18

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