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首页> 外文会议>17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia >4x288 Linear FPA on the Heteroepitaxial Hg_(1-x)Cd_xTe Base
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4x288 Linear FPA on the Heteroepitaxial Hg_(1-x)Cd_xTe Base

机译：Hg_（1-x）Cd_xTe异质外轴上的4x288线性FPA

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4x288 heteroepitaxial mercury-cadmium telluride (MCT) linear arrays for long wavelength infrared (LWIR) applications with 28x25 micron diodes and charge coupled devices (CCD) silicon readouts were designed, manufactured and tested. MCT heteroepitaxial layers were grown by MBE technology on (013) GaAs substrates with CdZnTe buffer layers and have cutoff wavelength λ_(co) ≈ 11.8 μm at T = 78 K. To decrease the surface influence of the carriers recombination processes the layers with composition changes and its increase both toward the surface and HgCdTe/CdZnTe boundary were grown. Silicon read-outs with CCD multiplexers with input direct injection circuits were designed, manufactured and tested. The testing procedure to qualify read-out integrated circuits (ROICs) on wafer level at T = 300 K was worked out. The silicon read-outs for 4x288 arrays, with skimming and partitioning functions included were manufactured by n-channel MOS technology with buried or surface channel CCD register. Designed CCD readouts are driven with four- or two-phase clock pulses. The HgCdTe arrays and Si CCD readouts were hybridized by cold welding indium bumps technology. With skimming mode used for 4x288 MCT n-p-junctions, the detectivity was about D_λ~* ≈ 9x10~(10) cmxHz~(1/2)/W for background temperature T_b = 295 K.
机译：设计，制造和测试了用于28x25微米二极管和电荷耦合器件（CCD）的长波长红外（LWIR）应用的4x288异质外延汞-碲化汞（MCT）线性阵列。 MCT异质外延层通过MBE技术在具有CdZnTe缓冲层的（013）GaAs衬底上生长，并且在T = 78 K时具有截止波长λ_（co）≈11.8μm。为减少载流子复合的表面影响，需改变组成变化的层并向表面和HgCdTe / CdZnTe边界生长。设计，制造和测试了带有输入直接注入电路的CCD多路复用器的硅读出器。制定了测试程序，以在T = 300 K的晶圆级上验证读出集成电路（ROIC）。 4x288阵列的硅读出器（包括略读和分区功能）是通过具有掩埋或表面沟道CCD寄存器的n沟道MOS技术制造的。设计的CCD读数由四相或两相时钟脉冲驱动。 HgCdTe阵列和Si CCD读数通过冷焊铟凸点技术进行了杂交。对于4x288 MCT n-p型结使用撇取模式，在背景温度T_b = 295 K时，检测率约为D_λ〜*≈9x10〜（10）cmxHz〜（1/2）/ W。

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