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首页> 外文会议>17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia >Features of growth and photoconductivity of epitaxial films of the Pb_(1-x)Mn_xTe (Ga) solid solutions
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Features of growth and photoconductivity of epitaxial films of the Pb_(1-x)Mn_xTe (Ga) solid solutions

机译：Pb_（1-x）Mn_xTe（Ga）固溶体外延膜的生长和光电导特性

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摘要

In the present work the features of growth and photoconductivity of epitaxial films of Pb_(1-x)Mn_xTe (Ga) (0 ≤ x ≤ 0,04) grown on substrates BaF_2(111, 100) by method of molecular beam condensation are investigated. Is established, that of film with perfect crystal structure (W~(1/2) = 80/100"), thickness 0,5/1 μm, obtained at speeds of condensation υ_k = 5 / 10 A/s and T_s = 400℃. Were have obtained high - resistance films n, p - types of conductivity and is shown, that they are photosensitive. At that the maximum in spectra of photoconductivity is displaced to shorter waves with growth of the contents of manganese in samples (x = 0,01/0,04), that is explained by increase of width of the forbidden band zone.
机译：在本工作中，研究了通过分子束凝聚法在衬底BaF_2（111，100）上生长的Pb_（1-x）Mn_xTe（Ga）（0≤x≤0.04）外延膜的生长和光电导特性。 。建立了具有理想晶体结构（W〜（1/2）= 80/100“），厚度为0.5 / 1μm，在冷凝速度υ_k= 5/10 A / s和T_s = 400下获得的薄膜获得了高电阻率的n，p型导电膜，并表明它们是光敏的，随着样品中锰含量的增加，光导谱的最大值移向较短的波（x = 0,01 / 0,04），这是通过增加禁带区域的宽度来解释的。

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