Photocapacitance effect in narrow band gap PbSnTe

机译：窄带隙PbSnTe 中的光电容效应

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Low frequency permittivity of PbSnTe solid solution was investigated in darkness and under illumination. ε=2,000-300,000 was found depending on temperature and illumination. For the first time the increase of ε under illumination by about two orders was observed at LH temperature. Far IR cut off of the effect was estimated. It was found that the best correlation of calculations with experimental data took place if we supposed the presence of narrow band of PbSnTe sensitivity within 300 - 400 μm spectral region.

机译：在黑暗和光照下研究了PbSnTe 固溶体的低频介电常数。根据温度和照度发现ε＝ 2,000-300,000。首次在LH温度下观察到ε在照明下增加了约两个数量级。估计远红外截止效应。如果我们假设在300-400μm光谱区域内存在窄带的PbSnTe 灵敏度，则可以得出与实验数据的最佳相关性。

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来源
《17th International Conference on Photoelectronics and Night Vision Devices May 27-31, 2002 Moscow, Russia》|2002年|p.341-346|共6页
会议地点 Moscow(RU)
作者
Alexander E. Klimov; Vladimir N. Shumsky;
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作者单位

Institute of Semiconductor Physics, Novosibirsk, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
lead-tin-tellurium; narrow band gap; far IR; permittivity; submillimeter wavelength;

机译：铅锡碲窄带隙远红外介电常数亚毫米波长;

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专利

1. Giant Magnetoresistance in Narrow-Gap Ferroelectric-Semiconductor PbSnTe:In [J] . Ferroelectrics . 2009,第1期

机译：窄间隙铁电半导体PbSnTe：In中的巨磁阻
2. Shallow traps and the space-charged-induced limitation of the injection current in PbSnTe:In narrow-gap ferroelectric [J] . Alexander E.Klimov, Vladimir N.Shumsky Physica, B. Condensed Matter . 2009,第23a24期

机译：PbSnTe中的浅陷阱和注入电流的空间电荷诱导限制：在窄间隙铁电体中
3. Photocapacitance Decay Technique for Interface Trap Characterization Near Inversion Band in Wide Bandgap MOS Capacitors [J] . DasGupta, S., Kaplar, IEEE Transactions on Electron Devices . 2013,第8期

机译：用于宽带隙MOS电容器中反型带附近界面陷阱表征的光电容衰减技术
4. Photocapacitance effect in narrow band gap PbSnTe [C] . Alexander E. Klimov, Vladimir N. Shumsky, SPIE-The International Society for Optical Engineering International conference on photoelectronics and night vision devices . 2003

机译：窄带隙PBSNTE 中的光电宽度效应
5. Electronic Structure and thermoelectric properties of narrow band gap semiconductors and pseudo-gap systems. [D] . Do, Dat Thanh. 2013

机译：窄带隙半导体和伪间隙系统的电子结构和热电性能。
6. Band Structure Extraction at Hybrid Narrow‐Gap Semiconductor–Metal Interfaces [O] . Sergej Schuwalow, Niels B. M. Schröter, Jan Gukelberger, 2021

机译：混合窄间隙半导体 - 金属界面处的带结构提取
7. Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects [O] . Alexander Klimov, Vladimir Shumsky 2011

机译：窄间隙铁电半导体PBSNTE中的局部状态：注射电流，IR和THz光敏，磁场效果
8. Growth experiment of narrow band-gap semiconductor PbSnTe single crystals in space (M-1) [R] . Yamada, Tomoaki 1993

机译：空间窄带隙半导体pbsnTe单晶的生长实验（m-1）

Photocapacitance effect in narrow band gap PbSnTe

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