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首页> 外文会议>18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil >SELF-SUSTAINED BRIDGES OF a-SiC:H OBTAINED BY PECVD TECHNIQUE
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SELF-SUSTAINED BRIDGES OF a-SiC:H OBTAINED BY PECVD TECHNIQUE

机译：PECVD技术获得的a-SiC：H自持桥

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摘要

Self-sustained bridges are fabricated by surface micromachming technique and utilizing hydrogenated amorphous silicon carbide (a-SiC:H) films as structural material and silicon oxinitride (SiO_xST_y) films as sacrificial material. Both, structural and sacrificial materials, are obtained by the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique at low temperatures. In order to evaluate the performance of materials with different structural properties films of a-SiC:H obtained in two different deposition conditions were studied. The microbridges were fabricated over silicon substrates, at 320℃ and utilizing (CH_4+SiH_4-H_2) gaseous mixtures to produce the a-SiC:H structural films. The SiO_xN_y sacrificial layer films were obtained at the same 320℃ and utilizing (N_2O+SiH_4) mixtures. The corrosion of the sacrificial layer was made in HF solution and the corrosion of the silicon carbide films was made by reactive ion etching (REE) using mixtures of CHF_3 and O_2. The results demonstrate the mechanical stability and superior properties of the a-SiC:H films with optimized structural order, proving the feasibility of developing more complex micro-eletro-mechanical devices based on these PECVD a-SiC:H films.
机译：通过表面微加工技术，并使用氢化非晶碳化硅（a-SiC：H）薄膜作为结构材料，以及氮氧化硅（SiO_xST_y）薄膜作为牺牲材料，制造了自持桥。结构材料和牺牲材料都是通过等离子体增强化学气相沉积（PECVD）技术在低温下获得的。为了评估具有不同结构特性的材料的性能，研究了在两种不同沉积条件下获得的a-SiC：H薄膜。在硅衬底上，在320℃的温度下，利用（CH_4 + SiH_4-H_2）气态混合物制备微桥，以制备a-SiC：H结构膜。 SiO_xN_y牺牲层薄膜是在相同的320℃条件下并利用（N_2O + SiH_4）混合物获得的。牺牲层的腐蚀在HF溶液中进行，而碳化硅膜的腐蚀通过使用CHF_3和O_2的混合物进行反应离子刻蚀（REE）进行。结果证明了具有优化结构顺序的a-SiC：H薄膜的机械稳定性和优越的性能，证明了基于这些PECVD a-SiC：H薄膜开发更复杂的微机电装置的可行性。

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