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Development and optimization of high-efficiency thin-film silicon based solar cells using VHF PECVD techniques.

机译：使用VHF PECVD技术开发和优化高效薄膜硅基太阳能电池。

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摘要

The objective of this dissertation was an intensive experimental study of development and optimization of high-efficiency thin-film silicon based solar cells made using very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD) techniques. New growth regimes have been developed and established in our Thin Film Silicon Photovoltaic Laboratory at the University of Toledo for preparation of high quality hydrogenated amorphous silicon (a-Si:H), hydrogenated amorphous silicon germanium (a-SiGe:H) and hydrogenated nanocrystalline silicon (nc-Si:H) intrinsic (i-) layers at high deposition rates using advanced VHF PECVD techniques. Si:H and SiGe:H deposition phase diagrams have also been developed using real-time spectroscopic ellipsometry. Using phase diagram concepts for guidance, high efficiency a-Si:H, a-SiGe:H and nc-Si:H based single-junction solar cells of a n-i-p structure, a-Si:H/nc-Si:H tandem-junction solar cells of a n-i-p/n-i-p structure and a-Si:H/a-SiGe:H/nc-Si:H triple-junction solar cells of a n-i-p/n-i-p/n-i-p structure have been fabricated and optimized with intrinsic layers made using the VHF PECVD process.General strategies for guidance toward optimum thin-film silicon solar cell fabrication have been generated in this research on a basis of a previous intensive research on thin-film silicon based solar cell fabrication and characterization: The best a-Si:H and a-SiGe:H solar cells could be achieved with high quality a-Si and a-SiGe i-layers made in proto-crystalline regime close to the transition to the amorphous and nanocrystalline mixed (a+nc)-Si:H phase, while the best nc-Si:H solar cells could be obtained by having their high quality i-layers made in single-phase nanocrystalline silicon near the mixed (a+nc)-Si:H phase transition regime. With the guidance of these strategies, initial efficiencies of 9.99% for 7.3 A/s a-Si n-i-p single-junction solar cells, 11.3% for 9 A/s a-SiGe single-junction solar cells, 9.81% for 8 A/s nc-Si single-junction solar cells, 12.2% for a-Si/nc-Si tandem cells, and 12.4% for a-Si/a-SiGe/nc-Si triple cells have all been achieved with their corresponding intrinsic-layers made by VHF PECVD at high rates. Stabilized efficiencies of 9.46% for 2.2 A/s nc-Si single-junction solar cells, 10.5% for 3 A/s a-Si/nc-Si tandem-junction solar cells, 11.0% for 3 A/s a-Si/a-SiGe/nc-Si triple-junction solar cells have been obtained.
机译：本文的目的是对使用超高频（VHF）等离子体增强化学气相沉积（PECVD）技术制成的高效薄膜硅基太阳能电池进行开发和优化的深入实验研究。在托莱多大学的薄膜硅光伏实验室中已经开发并建立了新的生长机制，用于制备高质量的氢化非晶硅（a-Si：H），氢化非晶硅锗（a-SiGe：H）和氢化纳米晶使用先进的VHF PECVD技术以高沉积速率沉积硅（nc-Si：H）本征（i-）层。 Si：H和SiGe：H沉积相图也已使用实时光谱椭圆偏振法开发。使用相图概念进行指导，可实现高效的a-Si：H，a-SiGe：H和nc-Si：H压区结构的单结太阳能电池，a-Si：H / nc-Si：H串联-压区/压区结构的结型太阳能电池和压区/压区/压区结构的a-Si：H / a-SiGe：H / nc-Si：H三结太阳能电池已经制造并通过使用在先前对薄膜硅基太阳能电池制造和表征的深入研究的基础上，本研究产生了指导最佳薄膜硅太阳能电池制造的一般策略：最佳a-Si： H和a-SiGe：H太阳能电池可以通过高质量的a-Si和a-SiGe i-层实现，该层在原晶状态下接近过渡到非晶和纳米晶混合（a + nc）-Si：H最好的nc-Si：H太阳能电池可以通过在单相纳米晶硅附近制造高质量的i层来获得。 （a + nc）-Si：H混合相变态。在这些策略的指导下，7.3 A / s a-Si nip单结太阳能电池的初始效率为9.99％，9 A / s a-SiGe单结太阳能电池的初始效率为11.3％，8 A / s的初始效率为9.81％ nc-Si单结太阳能电池，a-Si / nc-Si串联电池的12.2％和a-Si / a-SiGe / nc-Si三元电池的12.4％均已通过相应的本征层制成通过VHF PECVD以高速率进行。 2.2 A / s nc-Si单结太阳能电池的稳定效率为9.46％，3 A / s a-Si / nc-Si串联结太阳能电池的稳定效率为10.5％，3 A / s a-Si /电池的稳定效率为11.0％已经获得了a-SiGe / nc-Si三结太阳能电池。

著录项

  • 作者

    Cao, Xinmin.;

  • 作者单位

    The University of Toledo.;

  • 授予单位 The University of Toledo.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 107 p.
  • 总页数 107
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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